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IRF730S Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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IRF730S Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91048 www.vishay.com S11-1048-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF730S, SiHF730S Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 5.5 A (see fig. 12). c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 400 RDS(on) ()VGS = 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 5.7 Qgd (nC) 22 Configuration Single N-Channel MOSFET G D S K D2PAK (TO-263) S D G ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF730S-GE3 SiHF730STRL-GE3a SiHF730STRR-GE3a Lead (Pb)-free IRF730SPbF IRF730STRLPbFa - SiHF730S-E3 SiHF730STL-E3a - SiHF730S-E3 SiHF730STL-E3a - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 5.5 A TC = 100 °C 3.5 Pulsed Drain Currenta IDM 22 Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 290 mJ Avalanche Currenta IAR 5.5 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C PD 74 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.1 Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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