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IRF730S Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części IRF730S
Szczegółowy opis  Power MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF730S Arkusz danych(HTML) 1 Page - Vishay Siliconix

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Document Number: 91048
www.vishay.com
S11-1048-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF730S, SiHF730S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).
c. ISD  5.5 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
400
RDS(on) ()VGS = 10 V
1.0
Qg (Max.) (nC)
38
Qgs (nC)
5.7
Qgd (nC)
22
Configuration
Single
N-Channel MOSFET
G
D
S
K
D2PAK (TO-263)
S
D
G
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF730S-GE3
SiHF730STRL-GE3a
SiHF730STRR-GE3a
Lead (Pb)-free
IRF730SPbF
IRF730STRLPbFa
-
SiHF730S-E3
SiHF730STL-E3a
-
SiHF730S-E3
SiHF730STL-E3a
-
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
400
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
5.5
A
TC = 100 °C
3.5
Pulsed Drain Currenta
IDM
22
Linear Derating Factor
0.59
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Single Pulse Avalanche Energyb
EAS
290
mJ
Avalanche Currenta
IAR
5.5
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Maximum Power Dissipation
TC = 25 °C
PD
74
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.1
Peak Diode Recovery dV/dtc
dV/dt
4.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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