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SI5415EDU Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI5415EDU Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Si5415EDU www.vishay.com Vishay Siliconix S13-0789-Rev. A, 15-Apr-13 5 Document Number: 62837 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Safe Operating Area, Junction-to-Ambient Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0.01 0.1 1 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms 1 s 100 µs Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms DC 100 0 10 20 30 40 50 0 25 50 75 100 125 150 T C - Case Temperature (°C) Package Limited 60 0 5 10 15 20 25 30 35 25 50 75 100 125 150 TC - Case Temperature (°C) |
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