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Zakładka z wyszukiwarką danych komponentów |
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SI7159DN Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7159DN Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number: 68872 S-82122-Rev. A, 08-Sep-08 Vishay Siliconix Si7159DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 32 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0058 0.007 Ω VGS = - 4.5 V, ID = - 10 A 0.0085 0.0105 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 45 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 5170 pF Output Capacitance Coss 930 Reverse Transfer Capacitance Crss 890 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 118 180 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 63 95 Gate-Source Charge Qgs 14.3 Gate-Drain Charge Qgd 29.8 Gate Resistance Rg f = 1 MHz 0.4 2.1 4.2 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 16 30 ns Rise Time tr 15 30 Turn-Off DelayTime td(off) 72 140 Fall Time tf 17 30 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 73 140 Rise Time tr 132 200 Turn-Off DelayTime td(off) 65 100 Fall Time tf 40 70 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 30 A Pulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.72 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 54 100 ns Body Diode Reverse Recovery Charge Qrr 50 100 nC Reverse Recovery Fall Time ta 24 ns Reverse Recovery Rise Time tb 30 |
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