Producent | Numer części | Arkusz danych | Szczegółowy opis |
Toshiba Semiconductor |
1SV153
|
35Kb / 1P |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
1S2236
|
55Kb / 2P |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
1SV161
|
38Kb / 1P |
Silicon Epitaxial Planar Type Variable Capacitance Diode
|
1SV281TPH3F
|
151Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
1SV270
|
308Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
1SV285
|
177Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
1SV239
|
181Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
1SV273
|
173Kb / 2P |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
1SV279
|
170Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
1SV277
|
177Kb / 3P |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|