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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SI7633DP Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7633DP Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 13 page  www.vishay.com 2 Document Number: 69008 S-82667-Rev. A, 03-Nov-08 Vishay Siliconix Si7633DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 19 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 6.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0027 0.0033 Ω VGS = - 4.5 V, ID = - 15 A 0.0044 0.0055 Forward Transconductancea gfs VDS = - 15 V, ID = - 20 A 80 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 9500 pF Output Capacitance Coss 1830 Reverse Transfer Capacitance Crss 1740 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 20 A 173 260 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A 85 130 Gate-Source Charge Qgs 24 Gate-Drain Charge Qgd 37 Gate Resistance Rg f = 1 MHz 1.5 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 21 40 ns Rise Time tr 12 30 Turn-Off Delay Time td(off) 100 150 Fall Time tf 25 40 Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 100 150 Rise Time tr 90 140 Turn-Off Delay Time td(off) 85 130 Fall Time tf 50 75 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 60 A Pulse Diode Forward Currenta ISM 100 Body Diode Voltage VSD IS = - 5 A - 0.74 - 1.1 V Body Diode Reverse Recovery Time trr IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 65 130 ns Body Diode Reverse Recovery Charge Qrr 85 170 nC Reverse Recovery Fall Time ta 34 ns Reverse Recovery Rise Time tb 31 |
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