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SI5853CDC Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI5853CDC Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 3 Vishay Siliconix Si5853CDC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.6 A Pulse Diode Forward Current ISM - 10 Body Diode Voltage VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 2.3 A dI/dt = 100 A/µs TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta 16 ns Reverse Recovery Rise Time tb 4 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 0.5 A 0.381 0.46 V IF = 1 A 0.468 0.560 IF = 1 A, TJ = 125 °C 0.44 0.53 Maximum Reverse Leakage Current Irm Vr = 5 V 0.0081 0.080 mA Vr = 5 V, TJ = 85 °C 0.4 4 Vr = 5 V, TJ = 125 °C 2.8 28 Vr = 20 V 0.0093 0.09 Vr = 20 V, TJ = 85 °C 0.45 4.5 Vr = 20 V, TJ = 125 °C 3.2 32 Junction Capacitance CT Vr = 10 V 30 pF |
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