MTB9D0P03H8 datasheet(5/11 Pages) CYSTEKEC

Numer części	MTB9D0P03H8

Szczegółowy opis	P-Channel Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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5 / 11 page

CYStech Electronics Corp.

Spec. No. : C050H8

Issued Date : 2017.04.05

Revised Date : 2017.04.10

Page No. : 5/11

MTB9D0P03H8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

100

1000

10000

0

5

10

15

20

25

30

-VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=-250

μA

ID=-1mA

Maximum Safe Operating Area

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

-ID, Drain-Source Voltage(V)

DC

10ms

100ms

100

μs

TA=25°C, Tj=150°C, VGS=-10V

RθJA=23°C/W, Single Pulse

1s

1ms

RDS(ON)

Limited

Gate Charge Characteristics

0

2

4

6

8

10

0

6

12

18

24

30

36

42

48

54

60

Qg, Total Gate Charge(nC)

ID=-12A

VDS=-15V

VDS=-20V

Maximum Drain Current vs Junction Temperature

0

5

10

15

20

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, Tj=150°C, VGS=-10V

RθJA=23°C/W

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

-ID, Drain Current(A)

VDS=-10V

Pulsed

TA=25°C

Podobny numer części - MTB9D0P03H8

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cystech Electonics Corp...	MTB9D0P03J3	399Kb / 9P	P-Channel Enhancement Mode Power MOSFET
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	MTB9D0P03Q8-0-T3-G	420Kb / 9P	P-Channel Enhancement Mode MOSFET
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