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STF20N90K5 Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STF20N90K5
Szczegółowy opis  N-channel 900 V, 0.21typ., 20 A MDmesh??K5 Power MOSFET in a TO-220FP package
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STF20N90K5
Electrical characteristics
DocID029297 Rev 3
5/13
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 450 V, ID = 10 A,
RG
= 4.7 Ω
VGS = 10 V (see Figure 13: "Test
circuit for resistive load switching
times" and Figure 18: "Switching
time waveform")
-
20.2
-
ns
tr
Rise time
-
13.5
-
ns
td(off)
Turn-off delay time
-
64.7
-
ns
tf
Fall time
-
16
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
20
A
ISDM(1)
Source-drain current
(pulsed)
-
80
A
VSD(2)
Forward on voltage
ISD = 20 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
517
ns
Qrr
Reverrse recovery
charge
-
11.4
µC
IRRM
Reverse recovery
current
-
44
A
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
674
ns
Qrr
Reverse recovery
charge
-
14
µC
IRRM
Reverse recovery
current
-
41.6
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ±1 mA, ID= 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.


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