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STFU13N80K5 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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4 / 13 page Electrical characteristics STFU13N80K5 4/13 DocID028462 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V IDSS Zero gate voltage drain current (VGS = 0) VGS = 0 V, VDS = 800 V 1 µA VGS = 0 V, VDS = 800 V, TC = 125 °C 50 µA IGSS Gate-body leakage current (VDS = 0) VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 0.37 0.45 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 870 - pF Coss Output capacitance - 50 - pF Crss Reverse transfer capacitance - 2 - pF Co(tr) (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 640 V - 110 - pF Co(er) (2) Equivalent capacitance energy related 43 pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 5 - Ω Qg Total gate charge VDD = 640 V, ID = 12 A, VGS = 10 V - 29 - nC Qgs Gate-source charge - 7 - nC Qgd Gate-drain charge - 18 - nC Notes: (1) Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. (2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V - 16 - ns tr Rise time - 16 - ns td(off) Turn-off delay time - 42 - ns tf Fall time - 16 - ns |
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