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STFU13N80K5 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STFU13N80K5
Szczegółowy opis  N-channel 800 V, 0.37typ., 12 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package
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Strona internetowa  http://www.st.com
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Electrical characteristics
STFU13N80K5
4/13
DocID028462 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V,
TC = 125 °C
50
µA
IGSS
Gate-body leakage
current (VDS = 0)
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 6 A
0.37
0.45
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
870
-
pF
Coss
Output capacitance
-
50
-
pF
Crss
Reverse transfer capacitance
-
2
-
pF
Co(tr)
(1)
Equivalent output capacitance
VGS = 0 V, VDS = 0 to 640 V
-
110
-
pF
Co(er)
(2)
Equivalent capacitance
energy related
43
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
5
-
Qg
Total gate charge
VDD = 640 V, ID = 12 A,
VGS = 10 V
-
29
-
nC
Qgs
Gate-source charge
-
7
-
nC
Qgd
Gate-drain charge
-
18
-
nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS.
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay
time
VDD = 400 V, ID = 6 A, RG = 4.7 Ω,
VGS = 10 V
-
16
-
ns
tr
Rise time
-
16
-
ns
td(off)
Turn-off delay
time
-
42
-
ns
tf
Fall time
-
16
-
ns


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