Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

STPSC2H12 Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STPSC2H12
Szczegółowy opis  1200 V power Schottky silicon carbide diode
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC2H12 Arkusz danych(HTML) 2 Page - STMicroelectronics

  STPSC2H12 Datasheet HTML 1Page - STMicroelectronics STPSC2H12 Datasheet HTML 2Page - STMicroelectronics STPSC2H12 Datasheet HTML 3Page - STMicroelectronics STPSC2H12 Datasheet HTML 4Page - STMicroelectronics STPSC2H12 Datasheet HTML 5Page - STMicroelectronics STPSC2H12 Datasheet HTML 6Page - STMicroelectronics STPSC2H12 Datasheet HTML 7Page - STMicroelectronics STPSC2H12 Datasheet HTML 8Page - STMicroelectronics STPSC2H12 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
Characteristics
STPSC2H12
2/10
DocID030271 Rev 1
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
1200
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current
TC = 160 °C, DC current
TC = 120 °C, DC current
2
5
A
IFRM
Repetitive peak forward
current
TC = 160 °C, Tj
= 175 °C, δ = 0.1
9
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
TC = 25 °C
15
A
TC = 150 °C
13
tp = 10 µs square
TC = 25 °C
105
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
Table 3: Thermal parameters
Symbol
Parameter
Typ.
Max.
Unit
Rth(j-c)
Junction to case
1.9
2.7
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
1
12
µA
Tj = 150 °C
-
6
80
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 2 A
-
1.35
1.50
V
Tj = 150 °C
-
1.75
2.25
Notes:
(1)Pulse test: tp = 10 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 1.12 x IF(AV) + 0.565 x IF2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
QCj(1)
Total capacitive charge
VR = 800 V
-
15.6
-
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
-
190
-
pF
VR = 800 V, Tc = 25 °C, F = 1 MHz
-
13
-
Notes:
(1)Most accurate value for the capacitive charge:
������������(��������) = ∫ ��������(����)��������
��������
0


Podobny numer części - STPSC2H12

ProducentNumer częściArkusz danychSzczegółowy opis
logo
STMicroelectronics
STPSC2H065 STMICROELECTRONICS-STPSC2H065 Datasheet
236Kb / 10P
   650 V, 2 A high surge silicon carbide power Schottky diode
April 2019 Rev 1
More results

Podobny opis - STPSC2H12

ProducentNumer częściArkusz danychSzczegółowy opis
logo
STMicroelectronics
STPSC6H12 STMICROELECTRONICS-STPSC6H12 Datasheet
267Kb / 8P
   1200 V power Schottky silicon carbide diode
September 2016 Rev 5
STPSC10H12 STMICROELECTRONICS-STPSC10H12 Datasheet
438Kb / 8P
   1200 V power Schottky silicon carbide diode
STPSC5H12 STMICROELECTRONICS-STPSC5H12 Datasheet
469Kb / 10P
   1200 V power Schottky silicon carbide diode
January 2017 Rev 1
STPSC10H12C STMICROELECTRONICS-STPSC10H12C Datasheet
432Kb / 10P
   1200 V power Schottky silicon carbide diode
February 2017 Rev 1
STPSC15H12 STMICROELECTRONICS-STPSC15H12 Datasheet
435Kb / 8P
   1200 V power Schottky silicon carbide diode
STPSC20H12 STMICROELECTRONICS-STPSC20H12 Datasheet
436Kb / 8P
   1200 V power Schottky silicon carbide diode
May 2016 Rev 2
STPSC10H12-Y STMICROELECTRONICS-STPSC10H12-Y Datasheet
534Kb / 10P
   Automotive grade 1200 V power Schottky silicon carbide diode
January 2017 Rev 2
STPSC40H12C-Y STMICROELECTRONICS-STPSC40H12C-Y Datasheet
257Kb / 10P
   40 A 1200 V power Schottky silicon carbide diode
Rev 1 - January 2021
STPSC15H12G2-TR STMICROELECTRONICS-STPSC15H12G2-TR Datasheet
375Kb / 11P
   1200 V, 15 A, silicon carbide power Schottky diode
Rev 1 - August 2020
STPSC10H12B2-TR STMICROELECTRONICS-STPSC10H12B2-TR Datasheet
224Kb / 11P
   1200 V, 10 A, silicon carbide power Schottky diode
- Rev 1 - August 2020
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com