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STPSC2H12 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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STPSC2H12 Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 10 page Characteristics STPSC2H12 2/10 DocID030271 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 1200 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current TC = 160 °C, DC current TC = 120 °C, DC current 2 5 A IFRM Repetitive peak forward current TC = 160 °C, Tj = 175 °C, δ = 0.1 9 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal TC = 25 °C 15 A TC = 150 °C 13 tp = 10 µs square TC = 25 °C 105 Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C Table 3: Thermal parameters Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case 1.9 2.7 °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 1 12 µA Tj = 150 °C - 6 80 VF(2) Forward voltage drop Tj = 25 °C IF = 2 A - 1.35 1.50 V Tj = 150 °C - 1.75 2.25 Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the maximum conduction losses, use the following equation: P = 1.12 x IF(AV) + 0.565 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit QCj(1) Total capacitive charge VR = 800 V - 15.6 - nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz - 190 - pF VR = 800 V, Tc = 25 °C, F = 1 MHz - 13 - Notes: (1)Most accurate value for the capacitive charge: ������������(��������) = ∫ ��������(����)�������� �������� 0 |
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