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STB6N65M2 Arkusz danych(PDF) 8 Page - STMicroelectronics |
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STB6N65M2 Arkusz danych(HTML) 8 Page - STMicroelectronics |
8 / 23 page Test circuits STB6N65M2, STD6N65M2 8/23 DocID026762 Rev 1 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100 Ω 100nF D.U.T. VG Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01473v1 VDS ton tdon tdoff toff tf tr 90% 10% 10% 0 0 90% 90% 10% VGS |
Podobny numer części - STB6N65M2 |
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Podobny opis - STB6N65M2 |
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