Zakładka z wyszukiwarką danych komponentów |
|
STD6N65M2 Arkusz danych(PDF) 3 Page - STMicroelectronics |
|
STD6N65M2 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 23 page DocID026762 Rev 1 3/23 STB6N65M2, STD6N65M2 Electrical ratings 23 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 4 A ID Drain current (continuous) at TC = 100 °C 2.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 16 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) 2. ISD ≤ 4 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Peak diode recovery voltage slope 15 V/ns dv/dt (3) 3. VDS ≤ 520 V MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit D2PAK DPAK Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-pcb Thermal resistance junction-pcb max(1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board 30 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 0.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 100 mJ |
Podobny numer części - STD6N65M2 |
|
Podobny opis - STD6N65M2 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |