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STD6N80K5 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STD6N80K5 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 26 page DocID024661 Rev 3 5/26 STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 Electrical characteristics 26 . The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 2.25 A, RG = 4.7 Ω, VGS = 10 V -16- ns tr Rise time - 7.5 - ns td(off) Turn-off delay time - 28.5 - ns tf Fall time - 16 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4.5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 18 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 4.5 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 4.5 A, VDD = 60 V di/dt = 100 A/µs, - 280 ns Qrr Reverse recovery charge - 2.2 μC IRRM Reverse recovery current - 15.5 A trr Reverse recovery time ISD = 4.5 A,VDD = 60 V di/dt =100 A/µs, Tj = 150 °C - 450 ns Qrr Reverse recovery charge - 3.15 μC IRRM Reverse recovery current - 14 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID = 0 30 - - V |
Podobny numer części - STD6N80K5 |
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Podobny opis - STD6N80K5 |
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