STB10N95K5 datasheet(3/22 Pages) STMICROELECTRONICS

Numer części	STB10N95K5

Szczegółowy opis	Switching applications

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DocID024850 Rev 3

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STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5

Electrical ratings

22

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

D2PAK,

TO-220, TO-247

V

GS

Gate- source voltage

±30

V

I

D

Drain current (continuous) at T

C

= 25 °C

8

(1)

1.

Limited by maximum junction temperature.

8A

I

D

Drain current (continuous) at T

C

= 100 °C

5

(1)

5A

I

DM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

32

A

P

TOT

Total dissipation at T

C

= 25 °C

30

130

W

I

AR

Max current during repetitive or single

pulse avalanche

2.5

A

E

AS

Single pulse avalanche energy

(starting T

J

= 25 °C, I

D

=I

AS

, V

DD

= 50 V)

122

mJ

dv/dt

(3)

3.

I

SD

≤ 8 A, di/dt ≤ 100 A/μs, V

DS(peak) ≤

V

(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

4.

V

SD ≤

760 V

MOSFET dv/dt ruggedness

50

V/ns

V

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; T

C

=25 °C)

2500

V

T

j

T

stg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

D2PAK

TO-220,

TO-247

R

thj-case

Thermal resistance junction-case max

4.2

0.96

°C/W

R

thj-amb

Thermal resistance junction-amb max

62.5

°C/W

Rt

hj-pcb

(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board

Thermal resistance junction-pcb max

30

°C/W

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