STB28N60M2 datasheet(5/21 Pages) STMICROELECTRONICS

Numer części	STB28N60M2

Szczegółowy opis	Extremely low gate charge

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STB28N60M2, STI28N60M2, STP28N60M2,

STW28N60M2

Electrical characteristics

DocID025254 Rev 4

5/21

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

22

A

ISDM(1)

Source-drain current

(pulsed)

-

88

A

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 22 A

-

1.6

V

trr

Reverse recovery time

ISD = 22 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 21:

"Switching time waveform")

-

350

ns

Qrr

Reverse recovery charge

-

4.7

µC

IRRM

Reverse recovery current

-

27

A

trr

Reverse recovery time

ISD = 22 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 21: "Switching time

waveform")

-

451

ns

Qrr

Reverse recovery charge

-

6.5

µC

IRRM

Reverse recovery current

-

29

A

Notes:

(1)Pulse width is limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

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