STB150N3LH6 datasheet(1/15 Pages) STMICROELECTRONICS

Numer części	STB150N3LH6

Szczegółowy opis	N-channel 30 V, 2.4 m??typ., 80 A, STripFET??VI DeepGATE?? Power MOSFET in D짼PAK package

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This is information on a product in full production.

July 2012

Doc ID 023351 Rev 1

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STB150N3LH6

N-channel 30 V, 2.4 m

Ω typ., 80 A, STripFET™ VI DeepGATE™

Power MOSFET in D²PAK package

Datasheet — production data

Features

■ 100% avalanche tested

■ Logic level drive

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on)

max

ID

(1)

1.

Current limited by package.

PTOT

STB150N3LH6

30 V

3.0 m

Ω

80 A

110 W

D

2PAK

Table 1.

Device summary

Order code

Marking

Package

Packaging

STB150N3LH6

150N3LH6

D2PAK

Tape and reel

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Obsolete

Product(s)

- Obsolete

Product(s)

Podobny numer części - STB150N3LH6

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STB150NF04	395Kb / 11P	N-channel 40 V - 0.005 廓 - 80 A - D2PAK STripFET?줚I Power MOSFET
VBsemi Electronics Co.,...	STB150NF04	1Mb / 9P	N-Channel 40 V (D-S) MOSFET
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VBsemi Electronics Co.,...	STB150NF55	1Mb / 8P	N-Channel 60 V (D-S) MOSFET
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