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STP2N95K5 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STP2N95K5 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 23 page Electrical characteristics STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 4/23 DocID025300 Rev 1 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 950 V I DSS Zero gate voltage, V GS = 0 drain current V DS = 950 V V DS = 950 V, T C =125 °C 1 50 μA μA I GSS Gate-body leakage current V GS = ± 20 V; V DS =0 10 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 100 μA 345 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 1 A 4.2 5 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =100 V, f=1 MHz, V GS =0 -105 - pF C oss Output capacitance - 9 - pF C rss Reverse transfer capacitance -0.5 - pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V GS = 0, V DS = 0 to 760 V -16 - pF C o(er) (2) 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -6 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 16 - Ω Q g Total gate charge V DD = 760 V, I D = 2 A V GS =10 V (see Figure 19) -10 - nC Q gs Gate-source charge - 1.5 - nC Q gd Gate-drain charge - 8 - nC |
Podobny numer części - STP2N95K5 |
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Podobny opis - STP2N95K5 |
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