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STU5N95K5 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STU5N95K5
Szczegółowy opis  Ultra-low gate charge
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical ratings
DocID024639 Rev 4
3/26
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK, TO-220,
IPAK
TO-220FP
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
3.5
3.5 (1)
A
ID
Drain current (continuous) at TC = 100 °C
2.2
2.2 (1)
A
IDM(2)
Drain current pulsed
14
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (4)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)
2500
V
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 3.5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS
(4)VDS ≤ 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
TO-220
IPAK
Rthj-case
Thermal resistance junction-case
1.47
5
1.47
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
50
°C/W
Notes:
(1)When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
1
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
70
mJ


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