STD30N6LF6AG datasheet(4/15 Pages) STMICROELECTRONICS

Numer części	STD30N6LF6AG

Szczegółowy opis	Automotive-grade N-channel 60 V, 19 m廓 typ., 24 A STripFET??F6 Power MOSFET in a DPAK package

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Electrical characteristics

STD30N6LF6AG

4/15

DocID028036 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

60

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 60 V

1

µA

VGS = 0 V, VDS = 60 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1

2.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 12 A

19

25

mΩ

VGS = 4.5 V, ID = 12 A

24

30

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

-

1320

-

pF

Coss

Output capacitance

-

88.5

-

Crss

Reverse transfer

capacitance

-

58

-

Qg

Total gate charge

VDD = 30 V, ID = 24 A,

VGS = 10 V (see Figure 14:

"Gate charge test circuit")

-

26

-

nC

Qgs

Gate-source charge

-

6

-

Qgd

Gate-drain charge

-

3.3

-

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 12 A,

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Switching times

test circuit for resistive load"

and Figure 18: "Switching time

waveform")

-

10

-

ns

tr

Rise time

-

19

-

td(off)

Turn-off delay time

-

56

-

tf

Fall time

-

7

-

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