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STD30N10F7 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STD30N10F7 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID025607 Rev 3 5/16 STD30N10F7 Electrical characteristics 16 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 32 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs VDD = 80 V, TJ=150 °C (see Figure 15) -41 ns Qrr Reverse recovery charge - 47 nC IRRM Reverse recovery current - 2.3 A |
Podobny numer części - STD30N10F7 |
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Podobny opis - STD30N10F7 |
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