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STP80N10F7 Arkusz danych(PDF) 8 Page - STMicroelectronics |
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STP80N10F7 Arkusz danych(HTML) 8 Page - STMicroelectronics |
8 / 25 page Electrical characteristics STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 8/25 DocID025865 Rev 1 Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs temperature C 1500 1000 500 0 0 40 VDS(V) (pF) 20 2000 60 Ciss Coss Crss 80 2500 3000 3500 AM15975v1 VGS(th) 0.8 0.6 0.4 0.2 -55 -5 TJ(°C) (norm) -30 1 70 20 45 95 ID=250µA 0 120 1.2 AM15976v1 Figure 14. Normalized on-resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized VDS vs temperature RDS(on) 0.5 0 TJ(°C) (norm) ID=40A 1 -55 -5 -30 70 20 45 95 120 1.5 2 VGS=10V AM15977v1 VSD 0 40 ISD(A) (V) 20 60 80 0.6 0.7 0.8 0.9 TJ=-55°C TJ=150°C TJ=25°C 0.5 1 1.1 AM15978v1 VDS TJ(°C) (norm) 0.96 0.97 0.98 0.99 1 ID=1mA -55 -5 -30 70 20 45 95 120 1.01 1.02 1.03 1.04 AM15979v1 |
Podobny numer części - STP80N10F7 |
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Podobny opis - STP80N10F7 |
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