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STE88N65M5 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STE88N65M5 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STE88N65M5 4/14 DocID025974 Rev 1 2 Electrical characteristics (T C = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 650 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 650 V 1 μA V DS = 650 V, T C =125 °C 100 μA I GSS Gate-body leakage current (V DS = 0) V GS = ± 25 V ±100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250 μA 345 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 42 A 0.024 0.029 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS = 100 V, f = 1 MHz, V GS = 0 - 8825 - pF C oss Output capacitance - 223 - pF C rss Reverse transfer capacitance -11 - pF C o(tr) (1) 1. C o(tr) is a constant capacitance value that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS . Equivalent capacitance time related V GS = 0, V DS = 0 to 520 V - 778 - pF C o(er) (2) 2. C o(er) is a constant capacitance value that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS . Equivalent capacitance energy related V GS = 0, V DS = 0 to 520 V - 202 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Ω Q g Total gate charge V DD = 520 V, I D = 42 A, V GS = 10 V (see Figure 16) -204 - nC Q gs Gate-source charge - 51 - nC Q gd Gate-drain charge - 84 - nC |
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