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STP6N60M2 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STP6N60M2 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 18 page DocID024771 Rev 2 5/18 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics 18 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4.5 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 18 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 4.5 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 19) - 274 ns Qrr Reverse recovery charge - 1.47 µC IRRM Reverse recovery current - 10.7 A trr Reverse recovery time ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 19) - 376 ns Qrr Reverse recovery charge - 1.96 µC IRRM Reverse recovery current - 10.5 A |
Podobny numer części - STP6N60M2 |
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Podobny opis - STP6N60M2 |
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