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STP6N65M2 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STP6N65M2
Szczegółowy opis  Extremely low gate charge
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Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STF6N65M2, STP6N65M2, STU6N65M2
4/18
DocID026776 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
650
V
IDSS
Zero gate voltage
drain current
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V,
TC=125 °C
100
µA
IGSS
Gate-body leakage
current
VDS = 0, VGS = ± 25 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 2 A
1.2
1.35
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0, VDS = 100 V,
f = 1 MHz
-226
-
pF
Coss
Output capacitance
-
12.8
-
pF
Crss
Reverse transfer
capacitance
-0.65
-
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
-
114
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Qg
Total gate charge
VDD = 520 V, ID = 4 A,
VGS = 10 V
(see Figure 8)
-9.8
-
nC
Qgs
Gate-source charge
-
1.7
-
nC
Qgd
Gate-drain charge
-
4
-
nC
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15 and Figure 20)
-19
-
ns
tr
Rise time
-
7
-
ns
td(off)
Turn-off delay time
-
6.5
-
ns
tf
Fall time
-
20
-
ns


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