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STP6N65M2 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STP6N65M2 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STF6N65M2, STP6N65M2, STU6N65M2 4/18 DocID026776 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2 A 1.2 1.35 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 100 V, f = 1 MHz -226 - pF Coss Output capacitance - 12.8 - pF Crss Reverse transfer capacitance -0.65 - pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 520 V - 114 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge VDD = 520 V, ID = 4 A, VGS = 10 V (see Figure 8) -9.8 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge - 4 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 20) -19 - ns tr Rise time - 7 - ns td(off) Turn-off delay time - 6.5 - ns tf Fall time - 20 - ns |
Podobny numer części - STP6N65M2 |
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Podobny opis - STP6N65M2 |
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