STP110N10F7 datasheet(8/16 Pages) STMICROELECTRONICS

Numer części	STP110N10F7

Szczegółowy opis	N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

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Electrical characteristics

STF110N10F7, STP110N10F7

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DocID024058 Rev 2

Figure 14. Normalized BVDSS vs temperature

Figure 15. Source-drain diode forward vs

temperature

V(BR)DSS

TJ(°C)

(norm)

0.94

0.96

0.98

1.00

1.02

1.04

ID=250µA

-75

0

-50

75

25 50

-25

125 150

100

AM15955v1

VSD

0

40

ISD(A)

(V)

20

100

60

80

0.5

0.6

0.7

0.8

TJ=-55°C

TJ=175°C

TJ=25°C

0.9

1

1.1

AM15956v1

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