CSD18510Q5B datasheet(5/13 Pages) TI1

Numer części	CSD18510Q5B

Szczegółowy opis	N-Channel NexFET Power MOSFET

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TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

D006

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

D007

TC = 25°C, I D = 32 A

TC = 125°C, I D = 32 A

Qg - Gate Charge (nC)

0

10

20

30

40

50

60

70

80

90 100 110 120

0

1

2

3

4

5

6

7

8

9

10

D004

VDS - Drain-to-Source Voltage (V)

0

10

20

30

40

100

1000

10000

100000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

VGS - Gate-to-Source Voltage (V)

1

1.5

2

2.5

3

3.5

4

0

25

50

75

100

125

150

175

200

D003

TC = 125°C

TC = 25°C

TC = -55°C

VDS - Drain-to-Source Voltage (V)

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0

25

50

75

100

125

150

175

200

D002

VGS = 4.5 V

VGS = 6 V

VGS = 10 V

5

CSD18510Q5B

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Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

Figure 2. Saturation Characteristics

VDS = 5 V

Figure 3. Transfer Characteristics

ID = 32 A

VDS = 20 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Podobny numer części - CSD18510Q5B

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