Zakładka z wyszukiwarką danych komponentów |
|
STB85NS04Z Arkusz danych(PDF) 6 Page - STMicroelectronics |
|
STB85NS04Z Arkusz danych(HTML) 6 Page - STMicroelectronics |
6 / 15 page Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STB85NS04Z - STB85NS04Z-1 6/15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp=30V, ID=60A RG=4.7Ω, VGS=10V (see Figure 15) 85 145 90 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM Source-drain current Source-drain current (pulsed) 80 320 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=60A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=60A,VDD=100V di/dt=25A/µs,Tj=150°C (see Figure 18) 65 0.15 4.5 ns µC A Obsolete Product(s) - Obsolete Product(s) |
Podobny numer części - STB85NS04Z |
|
Podobny opis - STB85NS04Z |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |