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STGIPS10K60T-H Arkusz danych(PDF) 7 Page - STMicroelectronics |
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STGIPS10K60T-H Arkusz danych(HTML) 7 Page - STMicroelectronics |
7 / 19 page DocID024167 Rev 5 7/19 STGIPS10K60T-H Electrical characteristics 19 3 Electrical characteristics TJ = 25 °C unless otherwise specified. Note: tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. Table 7. Inverter part Symbol Parameter Test conditions Value Unit Min. Typ. Max. VCE(sat) Collector-emitter saturation voltage VCC = Vboot = 15 V, VIN (1)= 5 V, IC = 5 A 1. Applied between HINi, LINi and GND for i = U, V, W. -2.1 2.5 V VCC = Vboot = 15 V, VIN (1)= 5 V, IC = 5 A, Tj = 125 °C -1.8 ICES Collector-cut off current (VIN (1) = 0 “logic state”) VCE = 550 V VCC = Vboot = 15 V -150 µA VF Diode forward voltage (VIN (1) = 0 “logic state”), I C = 5 A -1.9 V Inductive load switching time and energy ton Turn-on time VDD = 300 V, VCC = Vboot = 15 V, VIN (1)= 0 ÷ 5 V IC = 5 A (see Figure 4) -320 - ns tc(on) Crossover time (on) - 70 - toff Turn-off time - 430 - tc(off) Crossover time (off) - 135 - trr Reverse recovery time - 130 - Eon Turn-on switching losses - 65 - µJ Eoff Turn-off switching losses - 75 - |
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