 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
STD18N06LT4G-VF01 Arkusz danych(PDF) 5 Page - ON Semiconductor |
|
||||||||||||||||||||||||||||||
STD18N06LT4G-VF01 Arkusz danych(HTML) 5 Page - ON Semiconductor |
|
|
5 / 7 page  NTD18N06L, NTDV18N06L www.onsemi.com 5 20 0 0.6 DRAIN−TO−SOURCE DIODE CHARACTERISTICS VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance RG, GATE RESISTANCE (W) 110 100 1000 1 VGS = 0 V TJ = 25°C Figure 10. Diode Forward Voltage versus Current 0 6 4 0 QG, TOTAL GATE CHARGE (nC) 8 2 6 100 24 12 0.68 0.76 1 4 8 12 ID = 18 A TJ = 25°C VGS Q2 Q1 QT tr td(off) td(on) tf 10 VDS = 30 V ID = 18 A VGS = 5 V 0.84 0.92 8 16 10 SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25 °C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance − General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. |
Podobny numer części - STD18N06LT4G-VF01 |
|
Podobny opis - STD18N06LT4G-VF01 |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
