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SI4832DY-T1 Arkusz danych(PDF) 5 Page - Vishay Siliconix

Numer części SI4832DY-T1
Szczegółowy opis  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Si4832DY
Vishay Siliconix
Document Number: 71774
S-31062—Rev. F, 26-May-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
0.1
0.01
10-4
10-3
10-2
10-1
110
30
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Square Wave Pulse Duration (sec)


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