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STD840DN40 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STD840DN40 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 9 page This is information on a product in full production. October 2012 Doc ID 16796 Rev 3 1/9 9 STD840DN40 Dual NPN high voltage transistors in a single package Datasheet — production data Features ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count ■ Fast switching speed Applications ■ Compact fluorescent lamp (CFL) 220 V mains ■ Electronic ballast for fluorescent lighting Description This device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in a dual-island DIP-8 package, with separated terminals for a high degree of mounting flexibility. Figure 1. Internal schematic diagram DIP-8 1 4 8 Table 1. Device summary Order code Marking Package Packaging STD840DN40 D840DN40 DIP-8 Tube www.st.com |
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