STGD3HF60HDT4 datasheet(3/26 Pages) STMICROELECTRONICS

Numer części	STGD3HF60HDT4

Szczegółowy opis	4.5 A, 600 V very fast IGBT with Ultrafast diode

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STGB3HF60HD, STGD3HF60HDT4,

STGF3HF60HD, STGP3HF60HD

Electrical ratings

DocID17690 Rev 5

3/26

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

D2PAK

TO-220

TO-220FP

VCES

Collector-emitter voltage (VGE = 0)

600

V

IC(1)

Continuous collector current at TC = 25 °C

7.5

A

IC(1)

Continuous collector current at TC = 100 °C

4.5

A

ICL(2)

Turn-off latching current

18

A

ICP(3)

Pulsed collector current

18

A

VGE

Gate-emitter voltage

± 20

V

IF

Diode RMS forward current at TC = 25 °C

10

A

IFSM

Surge non repetitive forward current tp = 10 ms

sinusoidal

25

A

PTOT

Total dissipation at TC = 25 °C

38

18

W

TSTG

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1)Calculated according to the iterative formula:

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(2)Vclamp = 80 %, (VCES), Tj = 150 °C, RG = 10 Ω, VGE = 15 V.

(3)Pulse width limited by maximum junction temperature range.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

DPAK

D2PAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case IGBT

3.3

6.9

°C/W

Thermal resistance junction-case diode

5

8

°C/W

Rthj-amb

Thermal resistance junction-ambient

100

62.5

°C/W

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