STGP19NC60SD datasheet(9/15 Pages) STMICROELECTRONICS

Numer części	STGP19NC60SD

Szczegółowy opis	20 A, 600 V fast IGBT with Ultrafast diode

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Producent	STMICROELECTRONICS [STMicroelectronics]

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9 / 15 page

STGF19NC60SD, STGP19NC60SD

Electrical characteristics

Doc ID 13689 Rev 4

9/15

2.2

Frequency applications

For a fast IGBT suitable for high frequency applications, the typical collector current vs.

maximum operating frequency curve is reported. That frequency is defined as follows:

fMAX = (PD - PC) / (EON + EOFF)

●

The maximum power dissipation is limited by maximum junction to case thermal

resistance:

Equation 1

PD = ΔT / RTHJ-C

considering

ΔT = TJ - TC = 125 °C- 75 °C = 50°C

●

The conduction losses are:

Equation 2

PC = IC * VCE(SAT) * δ

with 50% of duty cycle, VCESAT typical value @125°C.

●

Power dissipation during ON & OFF commutations is due to the switching frequency:

Equation 3

PSW = (EON + EOFF) * freq.

Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V,

VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see

Note 1), while the tail of the collector current is included in the EOFF measurements.

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