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STGW40H60DLFB Arkusz danych(PDF) 7 Page - STMicroelectronics |
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STGW40H60DLFB Arkusz danych(HTML) 7 Page - STMicroelectronics |
7 / 17 page DocID024370 Rev 4 7/17 STGW40H60DLFB, STGWT40H60DLFB Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area IC 60 40 20 0 1 f( kHz) (A) 80 10 100 Rectangular current shape (duty cycle= 0.5, VCC= 400V, Rg=4.7Ω, VGE = 0/15 V, TJ = 175 °C) TC= 80°C TC= 100°C GIPD011020131340FSR IC 100 10 1 0.1 1 VCE( V) (A) 10 10 μs 100 μs 1 ms Single pulse Tc= 25°C, TJ<= 175°C VGE= 15V 100 GIPD011020131351FSR Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current IC 60 40 20 0 6 7 VGE(V) (A) 10 80 8 9 100 TJ=175°C 120 140 -40°C 25°C VCE=5V GIPD011020131146FSR VF 2.1 1.7 1.3 0.9 20 IF( A) (V) 30 TJ= 175°C 40 50 60 70 TJ= 25°C TJ= -40°C GIPD011020131402FSR Figure 12. Normalized VGE(th) vs junction temperature Figure 13. Normalized V(BR)CES vs. junction temperature VGE(th) 1.1 1.0 0.6 -50 TJ(° C) (norm) 0 50 100 150 IC= 2mA VCE= VGE 0.7 0.8 0.9 GIPD011020131418FSR V(BR)CES 1.1 1.0 0.9 -50 TJ(° C) (norm) 0 50 100 150 IC= 2mA GIPD011020131412FSR |
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