STGWA40H120DF2 datasheet(5/17 Pages) STMICROELECTRONICS

Numer części	STGWA40H120DF2

Szczegółowy opis	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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STGW40H120DF2, STGWA40H120DF2

Electrical characteristics

DocID023753 Rev 5

5/17

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 600 V, IC = 40 A,

VGE = 15 V, RG = 10

Ω

(see Figure 31: " Switching

waveform")

18

-

ns

tr

Current rise time

37

-

ns

(di/dt)on

Turn-on current slope

1755

-

A/µs

td(off)

Turn-off-delay time

152

-

ns

tf

Current fall time

83

-

ns

Eon(1)

Turn-on switching energy

1

-

mJ

Eoff(2)

Turn-off switching energy

1.32

-

mJ

Ets

Total switching energy

2.32

-

mJ

td(on)

Turn-on delay time

VCE = 600 V, IC = 40 A,

VGE = 15 V, RG = 10

Ω

TJ = 175 °C

(see Figure 31: " Switching

waveform" )

36

-

ns

tr

Current rise time

20

-

ns

(di/dt)on

Turn-on current slope

1580

-

A/µs

td(off)

Turn-off-delay time

161

-

ns

tf

Current fall time

190

-

ns

Eon(1)

Turn-on switching energy

1.81

-

mJ

Eoff(2)

Turn-off switching energy

2.46

-

mJ

Ets

Total switching energy

4.27

-

mJ

tsc

Short-circuit withstand time

VCC = 600 V, VGE = 15 V,

TJstart = 150 °C

5

-

µs

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 40 A, VR = 600 V,

VGE = 15 V

(see Figure 31: " Switching

waveform") di/dt = 500 A/µs

-

488

ns

Qrr

Reverse recovery charge

-

2.59

µC

Irrm

Reverse recovery current

-

11.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

406

A/µs

Err

Reverse recovery energy

-

0.38

mJ

trr

Reverse recovery time

IF = 40 A, VR = 600 V,

VGE = 15 V TJ = 175 °C

(see Figure 31: " Switching

waveform") di/dt = 500 A/µs

-

484

ns

Qrr

Reverse recovery charge

-

4.5

µC

Irrm

Reverse recovery current

-

18.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

170

A/µs

Err

Reverse recovery energy

-

0.94

mJ

Podobny numer części - STGWA40H120DF2

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STGWA40H120F2	1,002Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed March 2015 Rev 3

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Podobny opis - STGWA40H120DF2

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STGW40H120F2	1,002Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed March 2015 Rev 3
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