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STGW60H65FB Arkusz danych(PDF) 7 Page - STMicroelectronics |
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STGW60H65FB Arkusz danych(HTML) 7 Page - STMicroelectronics |
7 / 16 page DocID025187 Rev 4 7/16 STGW60H65FB, STGWT60H65FB Electrical characteristics Figure 8. VCE(sat) vs. collector current Figure 9. Forward bias safe operating area VCE(sat) 1.4 1.2 020 IC(A) (V) 40 60 80 2.2 2.0 1.8 1.6 VGE= 15V TJ= 175°C TJ= 25°C TJ= -40°C 2.4 100 GIPD270820131423FSR Figure 10. Normalized V(BR)CES vs. junction temperature Figure 11. Normalized VGE(th) vs. junction temperature V(BR)CES (norm) 1.1 1.0 0.9 -50 TJ(°C) 0 50 100 150 IC= 2mA GIPD280820131415FSR VGE(th) (norm) 0.8 0.7 0.6 -50 TJ(°C) 0 50 100 150 0.9 1.0 IC= 1mA GIPD280820131503FSR Figure 12. Gate charge vs. gate-emitter voltage Figure 13. Switching loss vs temperature VGE (V) 4 2 0 0 Qg(nC) 50 100 150 200 6 8 250 300 350 10 12 14 VCC= 520V, IC= 60A Ig= 1mA GIPD280820131507FSR E (μJ) 1800 1000 200 25 TJ(°C) 50 75 100 125 2600 VCC= 400V, VGE= 15V Rg= 10Ω, IC= 60A 150 EOFF EON GIPD290820131623FSR |
Podobny numer części - STGW60H65FB |
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Podobny opis - STGW60H65FB |
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