STGW80H65DFB datasheet(1/22 Pages) STMICROELECTRONICS

Numer części	STGW80H65DFB

Szczegółowy opis	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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This is information on a product in full production.

May 2015

DocID024366 Rev 6

1/22

STGY80H65DFB, STGW80H65DFB,

STGWA80H65DFB STGWT80H65DFB

Trench gate field-stop IGBT, HB series

650 V, 80 A high speed

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 80 A

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the new “HB”

series of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

TO-247 long leads

1

2

3

TO-3P

1

2

3

TAB

1

2

3

Max247

TO-247

C (2 or TAB)

E (3)

G (1)

Table 1. Device summary

Order code

Marking

Package

Packing

STGY80H65DFB

GY80H65DFB

Max247

Tube

STGW80H65DFB

GW80H65DFB

TO-247

Tube

STGWA80H65DFB

GW80H65DFB

TO-247 long leads

Tube

STGWT80H65DFB

GWT80H65DFB

TO-3P

Tube

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