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STP15N60M2-EP Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STP15N60M2-EP
Szczegółowy opis  N-channel 600 V, 0.340typ., 11 A MDmesh??M2 EP Power MOSFET in a TO-220 package
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STP15N60M2-EP Arkusz danych(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP15N60M2-EP
4/14
DocID027298 Rev 2
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage Drain
current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C
100
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 5.5 A
0.340
0.378
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz, VGS = 0 V
-
590
-
pF
Coss
Output
capacitance
-
30
-
pF
Crss
Reverse transfer
capacitance
-
1.1
-
pF
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
148
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0 A
-
7
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 11 A, VGS = 10 V
(see Figure 15: "Gate charge test
circuit")
-
17
-
nC
Qgs
Gate-source
charge
-
3.1
-
nC
Qgd
Gate-drain charge
-
7.3
-
nC
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7: Switching energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
E(off)
Turn-off energy
(from 90% VGS to 0% ID)
VDD = 400 V, ID = 1.5 A
RG = 4.7
Ω, VGS = 10 V
-
4.7
-
µJ
VDD = 400 V, ID = 3.5 A
RG = 4.7
Ω, VGS = 10 V
-
5.2
-
µJ


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