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STP15N60M2-EP Arkusz danych(PDF) 4 Page - STMicroelectronics |
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4 / 14 page Electrical characteristics STP15N60M2-EP 4/14 DocID027298 Rev 2 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage Drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 5.5 A 0.340 0.378 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 590 - pF Coss Output capacitance - 30 - pF Crss Reverse transfer capacitance - 1.1 - pF Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 148 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 7 - Ω Qg Total gate charge VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 17 - nC Qgs Gate-source charge - 3.1 - nC Qgd Gate-drain charge - 7.3 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching energy Symbol Parameter Test conditions Min. Typ. Max. Unit E(off) Turn-off energy (from 90% VGS to 0% ID) VDD = 400 V, ID = 1.5 A RG = 4.7 Ω, VGS = 10 V - 4.7 - µJ VDD = 400 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V - 5.2 - µJ |
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