Zakładka z wyszukiwarką danych komponentów |
|
STU13N65M2 Arkusz danych(PDF) 5 Page - STMicroelectronics |
|
STU13N65M2 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID026894 Rev 1 5/16 STP13N65M2, STU13N65M2 Electrical characteristics 16 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 10 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 40 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage VGS = 0 V, ISD = 10 A - 1.6 V trr Reverse recovery time ISD =10 A, di/dt = 100 A/µs VDD =60 V (see Figure 18) - 312 ns Qrr Reverse recovery charge - 2.7 µC IRRM Reverse recovery current - 17.5 A trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, VDD =60 V, Tj =150 °C (see Figure 18) - 464 ns Qrr Reverse recovery charge - 4.1 µC IRRM Reverse recovery current - 17.5 A |
Podobny numer części - STU13N65M2 |
|
Podobny opis - STU13N65M2 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |