STU16N60M2 datasheet(4/16 Pages) STMICROELECTRONICS

Numer części	STU16N60M2

Szczegółowy opis	N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

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Electrical characteristics

STP16N60M2, STU16N60M2

4/16

DocID027198 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6 A

0.28

0.32

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

-

700

-

pF

Coss

Output capacitance

-

38

-

pF

Crss

Reverse transfer

capacitance

-

1.2

-

pF

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 V to 480 V, VGS = 0 V

-

140

-

pF

RG

Intrinsic gate resistance

f = 1 MHz open drain

-

5.3

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 12 A,

VGS = 10 V (see Figure 17:

"Gate charge test circuit")

-

19

-

nC

Qgs

Gate-source charge

-

3.3

-

nC

Qgd

Gate-drain charge

-

9.5

-

nC

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 6 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 16: "Switching times

test circuit for resistive load"

and Figure 21: "Switching

time waveform")

-

10.5

-

ns

tr

Rise time

-

9.5

-

ns

td(off)

Turn-off-delay time

-

58

-

ns

tf

Fall time

-

18.5

-

ns

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