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IRF6618TR1 Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF6618TR1
Szczegółowy opis  HEXFET Power MOSFET
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF6618TR1 Arkusz danych(HTML) 2 Page - International Rectifier

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IRF6623
2
www.irf.com
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T
J = 25°C, L = 0.61mH,
RG = 25Ω, IAS = 12A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Surface mounted on 1 in. square Cu board.
Notes:
… Used double sided cooling, mounting pad.
† Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‡ T
C measured with thermal couple mounted to top (Drain) of
part.
ˆ Rθ is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
15
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.4
5.7
m
–––
7.5
9.7
VGS(th)
Gate Threshold Voltage
1.55
–––
2.45
V
∆V
GS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.4
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
34
–––
–––
S
Qg
Total Gate Charge
–––
11
17
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
nC
Qgd
Gate-to-Drain Charge
–––
4.0
–––
Qgodr
Gate Charge Overdrive
–––
2.5
–––
See Fig. 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.2
–––
Qoss
Output Charge
–––
8.9
–––
nC
td(on)
Turn-On Delay Time
–––
9.7
–––
tr
Rise Time
–––40–––
td(off)
Turn-Off Delay Time
–––
12
–––
ns
tf
Fall Time
–––
4.5
–––
Ciss
Input Capacitance
–––
1360
–––
Coss
Output Capacitance
–––
630
–––
pF
Crss
Reverse Transfer Capacitance
–––
240
–––
Diode Characteristics
Parameter
Min.
Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.6
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
120
(Body Diode)
c
VSD
Diode Forward Voltage
–––
0.81
1.0
V
trr
Reverse Recovery Time
–––
20
30
ns
Qrr
Reverse Recovery Charge
–––
12
18
nC
ID = 12A
VGS = 0V
VDS = 10V
ID = 12A
TJ = 25°C, IF = 12A
di/dt = 100A/µs
e
TJ = 25°C, IS = 12A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
e
VGS = 4.5V, ID = 12A
e
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 4.5V
MOSFET symbol
Clamped Inductive Load
VDS = 10V, ID = 12A
Conditions
ƒ = 1.0MHz
VDS = 10V, VGS = 0V
VDD = 16V, VGS = 4.5V
e
VDS = 10V


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