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SZNUP4114HMR6T1G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części SZNUP4114HMR6T1G
Szczegółowy opis  Transient Voltage Suppressors
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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NUP4114 Series, SZNUP4114 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
(Note 1)
5.5
V
Breakdown Voltage
VBR
IT = 1 mA, (Note 2)
5.5
V
Reverse Leakage Current
IR
VRWM = 5.5 V
1.0
mA
Clamping Voltage
VC
IPP = 5 A (Note 3)
9.0
V
Clamping Voltage
VC
IPP = 8 A (Note 3)
10
V
Clamping Voltage
VC
IPP = 1 A (Note 4)
8.3
10
V
ESD Clamping Voltage
VC
Per IEC61000−4−2 (Note 5)
See Figures 1 & 2
Maximum Peak Pulse Current
IPP
8x20
ms Waveform (Note 3)
12
A
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
0.6
pF
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins
0.3
pF
1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. VBR is measured at pulse test current IT.
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Nonrepetitive current pulse (I/O to GND).
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include SZ−prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2


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