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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BA892V-02V Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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BA892V-02V Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 2 VISHAY BA892V-02V Vishay Semiconductors Characteristics (Tamb = 25°C unless otherwise specified) Reverse current VR = 20 V IR 20 nA Forward voltage IF = 100 mA VF 1.1 V Diode capacitance f = 1 MHz, VR = 0 CD 1.1 pF f = 1 MHz, VR = 1 V CD 0.9 1.2 pF f = 1 MHz, VR = 3 V CD 0.82 1.1 pF Forward resistance f = 100 MHz, IF = 1 mA rf 0.7 Ω f = 100 MHz, IF = 3 mA rf 0.5 0.7 Ω f = 100 MHz, IF = 10 mA rf 0.38 0.5 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 100 ns Parameter Test condition Sub type Symbol Min Typ. Max Unit Figure 1. Forward Resistance vs. Forward Current Figure 2. Diode Capacitance vs. Reverse Voltage 0.1 1.0 10.0 0.10 1.00 10.00 IF – Forward Current ( mA ) 16862 f = 100 MHz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 16859 VR – Reverse Voltage (V) f = 1 MHz |
Podobny numer części - BA892V-02V |
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Podobny opis - BA892V-02V |
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