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ST3DV520AQTR Arkusz danych(PDF) 7 Page - STMicroelectronics

Numer części ST3DV520AQTR
Szczegółowy opis  High bandwidth switch with 20- to 10-bit MUX/DEMUX
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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ST3DV520A
Electrical characteristics
Doc ID 16885 Rev 4
7/21
4
Electrical characteristics
Table 6.
DC electrical characteristics (VCC = 3.3 V ±10%)
Symbol
Parameter
Test condition
Value
Unit
-40 to 85 °C
Min.
Typ.
Max.
VIH
Voltage input high (SEL)
High level guaranteed
2
V
VIL
Voltage input low (SEL)
Low level guaranteed
-0.5
0.8
V
VIK
Clamp diode voltage (SEL)
VCC = 3.6 V
IIN = -18 mA
–-0.8
-1.2
V
IIH
Input high current (SEL)
VCC = 3.6 V
VIN = VCC
––
±5
µA
IIL
Input low current (SEL)
VCC = 3.6 V
VIN = GND
––
±5
µA
IOFF(SW)
(1)
Leakage current through the switch
common terminals (A to J)
VCC = 3.6 V
A to J = VCC
LED1 to LED3 = VCC
A0 to J0 = 0 V
A1 to J1 = floating
SEL = VCC
––
±1
µA
IOFF(SEL)
SEL pin leakage current
VCC = 0 V
SEL = 0 to 3.6 V
––
±1
µA
RON
Switch ON resistance(2)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
–4.0
6.5
Ω
RFLAT
ON resistance flatness (2),(3)
VCC = 3.0 V
VIN at 1.5 and VCC
IIN = -40 mA
–0.5
Ω
ΔR
ON
ON resistance match between
channel
ΔR
ON = RONMAX-RONMIN
(2),(4)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
–0.4
1
Ω
1.
Refer to Figure 4: Test circuit for leakage current (IOFF) on page 11.
2.
Measured by voltage drop between channels at indicated current through the switch. ON resistance is determined by the
lower of the voltages.
3.
Flatness is defined as the difference between the RONMAX and RONMIN of ON resistance over the specified range.
4.
ΔR
ON measured at same VCC, temperature and voltage level.
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