©2004 Fairchild Semiconductor Corporation

FDZ7064S Rev. B2 (W)

Electrical Characteristics

T

Symbol

Parameter

Test Conditions

Min Typ

Max Units

Off Characteristics

Drain–Source Breakdown Voltage

30

V

Breakdown Voltage Temperature

Coefficient

26

mV/°C

Zero Gate Voltage Drain Current

500

uA

Gate–Body Leakage

±100

nA

On Characteristics

(Note 2)

Gate Threshold Voltage

1

1.4

3

V

Gate Threshold Voltage

Temperature Coefficient

–0.5

mV/°C

Static Drain–Source

On–Resistance

6

7

9

7

9

11

m

Ω

Forward Transconductance

66

S

Dynamic Characteristics

Input Capacitance

2840

pF

Output Capacitance

f = 1.0 MHz

525

pF

Reverse Transfer Capacitance

190

pF

Gate Resistance

1.9

Ω

Turn–On Delay Time

11

20

ns

Turn–On Rise Time

12

22

ns

Turn–Off Delay Time

50

80

ns

Turn–Off Fall Time

18

32

ns

Total Gate Charge

25

35

nC

Gate–Source Charge

7

nC

Gate–Drain Charge

6

nC

Drain–Source Diode Characteristics

Drain–Source Diode Forward

Voltage

(Note 1)

0.4

0.7

V

Diode Reverse Recovery Time

22

ns

Diode Reverse Recovery Charge

See Diode Characteristic, page

5

19

nC

Notes:

1.

R

is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to

the circuit board side of the solder ball, R

, is defined for reference. For R

, the thermal reference point for the case is defined as the top surface of the

copper chip carrier. R

and R

are guaranteed by design while R

is determined by the user's board design.

a)

56°C/W when

of 2 oz copper

b) 119°C/W when mounted on

a minimum pad of 2 oz

copper

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%