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LM2791LD-H Arkusz danych(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numer części LM2791LD-H
Szczegółowy opis  Current Regulated Switched Capacitor LED Driver with Analog Brightness Control
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Producent  NSC [National Semiconductor (TI)]
Strona internetowa  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2791LD-H Arkusz danych(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
−0.3 to 6V
BRGT, SD
-0.3 to (V
IN +0.2V)
Power Dissipation(Note 2)
400 mW
T
JMAX (Note 2)
150˚C
θ
JA (Note 7)
55˚C/W
Storge Temperature
−65˚C to +100˚C
Lead Temp. (Soldering, 5 sec.)
260˚C
ESD Rating
Human Body Model
2KV
Machine Model
200V
Operating Conditions
Input Voltage (V
IN)
3.0V to 5.8V
BRGT
0 to 3.0V
Ambient Temperature (T
A)
−30˚C to +85˚C
Junction Temperature (T
J)
−30˚C to +100˚C
Electrical Characteristics
Limits in standard typeface are for T
J = 25˚C and limits in boldface type apply over the full Operating Temperature Range.
Unless otherwise specified, C
1 =CIN =CHOLD = 1 µF, VIN = 3.6V, VDIODE = 3.6V, RSET = 332
Ω, BRGT pin = 0V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
DX
Diode Current at ID1,2
V
IN= 3V, RSET = 270
16.5
18
mA
Available Current at Output Dx
V
IN= 3V
14.5
V
IN= 3.3V
12.8
15.1
17.7
V
IN= 3.6V
13.3
15.7
18.4
V
IN = 4.4V
16.8
I
Dx
Load Regulation at Output Dx
V
IN =3.6V
V
DX=3.0V
V
DX=4.0V
16
15.4
mA
I
DX
Line Regulation of Dx Output
Current
3.3V
≤ V
IN
≤ 4.4V
V
DX = 3.6V
15.7
mA
I
D-MATCH
Current Matching Between Any
Two Outputs
3.0V
≤ V
IN
≤ 4.4V
V
D1,VD2 = 3.6V
0.3
%
I
Q
Quiescent Supply Current
3.0V
≤ V
IN
≤ 4.4V, Active, No
Load Current
0.7
2
mA
I
SD
Shutdown Supply Current
3.0V
≤ V
IN
≤ 5.5V, Shutdown at
85˚C
0.1
0.3
1µA
V
IH
SD Input Logic High
3.0V
≤ V
IN
≤ 5.5V, (Note 5)
0.8V
IN
V
V
IL
SD Input Logic Low
3.0V
≤ V
IN
≤ 5.5V, (Note 5)
0.2V
IN
V
I
LEAK-SD
SD Input Leakage Current
0V
≤ V
SD
≤ V
IN
0.1
µA
R
BRGT
BRGT Input Resistance
250
k
I
SET
I
SET Pin Output Current
I
Dx/25
mA
f
SW
Switching Frequency (Note 4)
3.0V
≤ V
IN
≤ 4.4V
450
650
850
kHz
t
START
Startup Time(Note 6)
I
Dx = 90% steady state
10
µs
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device
beyond its rated operating conditions.
Note 2: D1 and D2 may be shorted to GND without damage. POUT may be shorted to GND for 1sec without damage.
Note 3: In the test circuit, all capacitors are 1.0µF, 0.3
Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output
voltage and efficiency.
Note 4: The output switches operate at one half of the oscillator frequency, fOSC =2fSW.
Note 5: The interanl thresholds of the shutdown bar are set at about 40% of VIN.
Note 6: This electrical specification is guaranteed by design.
Note 7: For more inforamtion regarding the LLP package, please refer to National Semiconductor Application note AN1187
www.national.com
4


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