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ACE2N7002KA Arkusz danych(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2N7002KA Arkusz danych(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE2N7002KA N-Channel Enhancement Mode MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.7 2.5 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±30 uA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V, TJ=25℃ 1 uA VDS=48V, VGS=0V, TJ=70℃ 100 Drain-Source On-Resistance RDS(ON) VGS=10V, ID=0.5A 2.0 3.0 Ω VGS=4.5V, ID=0.2A 3.0 3.5 Forward Trans Conductance gfs(1) VDS=10V, ID=0.6A 0.08 S Diode Forward Voltage VSD(1) VGS=0V, IS=-0.5A 1.3 V Dynamic Total Gate Charge Qg VDD=50V, VGS=4.5V, ID≡0.6A 0.6 0.8 nC Gate-Source Charge Qgs 0.2 Gate-Drain Charge Qgd 0.2 Input Capacitance Ciss VDS = 25 V, f = 1 MHz, VGS = 0 30 50 pF Output Capacitance Coss 7 Reverse Transfer Capacitance Crss 4 Turn-On Time td(on) VDD=30V, ID≡0.6A, RG=3.3Ω, VGS=10V, RD=52Ω 2 ns tr 15 Turn-Off Time td(off) 8 tf 11 (1) Pulsed: Pulse duration = 300 μs, duty cycle 2 %. (2) Pulse width limited by safe operating area. |
Podobny numer części - ACE2N7002KA |
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Podobny opis - ACE2N7002KA |
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