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2SK3159 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SK3159 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3159 R07DS1357EJ0500 Rev.5.00 Page 4 of 7 Aug 02, 2016 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 100 –500 50 100 150200 0 20 40 60 80 0.10.31 30 100 200 2 5 10 20 1 0.5 Pulse Test 10 50 ID = 50 A VGS = 4 V 10 V 10, 20 A 10, 20 A 50 A 500 3 100 0.11 3 10 30 0.3 010 20 30 40 50 30000 3000 10000 1000 100 300 200 0 0 40 80 120 160 20 80160240 320 400 0 4 8 12 16 5000 1000 500 200 50 100 0.10.21 5 10 1000 500 200 50 100 20 10 ID = 50 A VGS VDS 20 10 0.5 2 50 20 100 VDD = 100 V 50 V 25 V VDD = 100 V 50 V 25 V VGS = 0 f = 1 MHz Ciss Coss Crss 2000 VDS = 10 V Pulse Test di / dt = 50 A / μs VGS = 0, Ta = 25°C tf tr td(off) td(on) VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % Tc = –25°C 25°C 75°C |
Podobny numer części - 2SK3159_16 |
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Podobny opis - 2SK3159_16 |
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