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SI4370DY Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI4370DY Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 9 page FEATURES D LITTLE FOOTr Plus Schottky D Si4830DY Pin Compatible D PWM Optimized D 100% Rg Tested APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter Si4370DY Vishay Siliconix Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Channel 1 0.022 @ VGS = 10 V 7.5 Channel-1 30 0.030 @ VGS = 4.5 V 6.5 Channel 2 30 0.022 @ VGS = 10 V 7.5 Channel-2 0.028 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 Schottky Diode Ordering Information: Si4370DY—E3 (Lead Free) Si4370DY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Steady State Parameter Symbol Channel-1 Channel-2 Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 "12 "20 "12 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 7.5 5.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 6.0 4.6 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction)a IS 1.7 0.9 Maximum Power Dissipationa TA = 25_C PD 2.0 1.1 W Maximum Power Dissipationa TA = 70_C PD 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Schottky Parameter Symbol Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 52 62.5 53 62.5 Maximum Junction-to-Ambienta Steady-State RthJA 93 110 93 110 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 40 35 40 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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