4

C1

B2

E2

E1

B1

C2

pin #1

NPN Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 200 mA. Sourced from Process 07.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

45

V

Collector-Base Voltage

50

V

Collector-Base Voltage

50

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous

200

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

2001 Fairchild Semiconductor Corporation

Rev.A1

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

Thermal Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

BC847S

Total Device Dissipation

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

415

°C/W

BC847S

SC70-6

Mark: 1C

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.